Toshiba Semiconductor and Storage - TPH5900CNH,L1Q

KEY Part #: K6416479

TPH5900CNH,L1Q Pricing (USD) [185557PC Stock]

  • 1 pcs$0.20934
  • 5,000 pcs$0.20830

Nimewo Pati:
TPH5900CNH,L1Q
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 150V 9A 8SOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPH5900CNH,L1Q Atribi pwodwi yo

Nimewo Pati : TPH5900CNH,L1Q
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 150V 9A 8SOP
Seri : U-MOSVIII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 59 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 600pF @ 75V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.6W (Ta), 42W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOP Advance (5x5)
Pake / Ka : 8-PowerVDFN