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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. IXFX55N50F

IXYS-RF - IXFX55N50F

KEY Part #: K6397851

IXFX55N50F Pricing (USD) [3909PC Stock]

  • 1 pcs$14.69588
  • 10 pcs$13.59554
  • 100 pcs$11.61122
Nimewo Pati:
IXFX55N50F
Manifakti:
IXYS-RF
Detaye deskripsyon:
MOSFET N-CH 500V 55A PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in IXYS-RF IXFX55N50F electronic components. IXFX55N50F can be shipped within 24 hours after order. If you have any demands for IXFX55N50F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX55N50F Atribi pwodwi yo

Nimewo Pati : IXFX55N50F
Manifakti : IXYS-RF
Deskripsyon : MOSFET N-CH 500V 55A PLUS247
Seri : HiPerRF™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 55A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 85 mOhm @ 27.5A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 560W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS247™-3
Pake / Ka : TO-247-3

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