GeneSiC Semiconductor - GB100XCP12-227

KEY Part #: K6532798

Kategori Fanmi yo:: KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - JFETs, Modil pouvwa chofè and Transistors - IGBTs - Arrays ...

Avantaj konpetitif:: We specialize in GeneSiC Semiconductor GB100XCP12-227 electronic components. GB100XCP12-227 can be shipped within 24 hours after order. If you have any demands for GB100XCP12-227, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

Nimewo Pati : GB100XCP12-227

Manifakti : GeneSiC Semiconductor

Deskripsyon : IGBT 1200V 100A SOT-227

Seri : -

Estati Pati : Obsolete

Kalite IGBT : PT

Nou konte genyen : Single

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : 100A

Pouvwa - Max : -

Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 100A

Kouran - Cutoff Pèseptè (Max) : 1mA

Antre kapasite (Cies) @ Vce : 8.55nF @ 25V

Antre : Standard

NTC thermistor : No

Operating Tanperati : -40°C ~ 175°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : SOT-227-4

Pake Aparèy Founisè : SOT-227

Ou ka enterese tou

VS-GB90SA120U

Vishay Semiconductor Diodes Division

TRANSISTOR INSLTED GATE BIPOLAR.
VS-GB90DA60U

Vishay Semiconductor Diodes Division

TRANSISTOR INSLTED GATE BIPOLAR.
CPV362M4K

Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 31 IMS-2.
CPV362M4U

Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 3.9A IMS-2.
CPV363M4U

Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 6.8A IMS-2.
VS-GB75NA60UF

Vishay Semiconductor Diodes Division

IGBT 600V 70A HS CHOPPER SOT-227. Rectifiers Output & SW Modules SOT-227 IGBT

Pati cho