Vishay Semiconductor Diodes Division - VS-GB90SA120U

KEY Part #: K6532812

VS-GB90SA120U Pricing (USD) [1411PC Stock]

  • 1 pcs$35.84552
  • 10 pcs$34.05116
  • 25 pcs$33.15505
  • 100 pcs$30.69080

Nimewo Pati:
VS-GB90SA120U
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
TRANSISTOR INSLTED GATE BIPOLAR.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-GB90SA120U electronic components. VS-GB90SA120U can be shipped within 24 hours after order. If you have any demands for VS-GB90SA120U, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB90SA120U Atribi pwodwi yo

Nimewo Pati : VS-GB90SA120U
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : TRANSISTOR INSLTED GATE BIPOLAR
Seri : -
Estati Pati : Active
Kalite IGBT : NPT
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 149A
Pouvwa - Max : 862W
Vce (sou) (Max) @ Vge, Ic : 3.9V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) : 250µA
Antre kapasite (Cies) @ Vce : -
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SOT-227-4
Pake Aparèy Founisè : SOT-227

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