STMicroelectronics - STH260N6F6-2

KEY Part #: K6396940

STH260N6F6-2 Pricing (USD) [25302PC Stock]

  • 1 pcs$1.63697
  • 1,000 pcs$1.62883

Nimewo Pati:
STH260N6F6-2
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 60V 180A H2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STH260N6F6-2 Atribi pwodwi yo

Nimewo Pati : STH260N6F6-2
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 60V 180A H2PAK
Seri : DeepGATE™, STripFET™ VI
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.4 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 183nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 11800pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : H2Pak-2
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB