Infineon Technologies - IRGP4750DPBF

KEY Part #: K6423590

IRGP4750DPBF Pricing (USD) [9600PC Stock]

  • 1 pcs$3.48153
  • 10 pcs$3.14395
  • 100 pcs$2.60295
  • 500 pcs$2.26662
  • 1,000 pcs$1.97415

Nimewo Pati:
IRGP4750DPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 650V TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Tiristors - SCR - Modil yo and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRGP4750DPBF electronic components. IRGP4750DPBF can be shipped within 24 hours after order. If you have any demands for IRGP4750DPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRGP4750DPBF Atribi pwodwi yo

Nimewo Pati : IRGP4750DPBF
Manifakti : Infineon Technologies
Deskripsyon : IGBT 650V TO-247
Seri : -
Estati Pati : Obsolete
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 70A
Kouran - Pèseptè batman (Icm) : 105A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 35A
Pouvwa - Max : 273W
Oblije chanje enèji : 1.3mJ (on), 500µJ (off)
Kalite Antre : Standard
Gate chaje : 105nC
Td (on / off) @ 25 ° C : 50ns/105ns
Kondisyon egzamen an : 400V, 35A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 150ns
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247AC