ON Semiconductor - FDG311N

KEY Part #: K6416166

FDG311N Pricing (USD) [529955PC Stock]

  • 1 pcs$0.07014
  • 3,000 pcs$0.06979

Nimewo Pati:
FDG311N
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 20V 1.9A SC70-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - RF and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDG311N electronic components. FDG311N can be shipped within 24 hours after order. If you have any demands for FDG311N, Please submit a Request for Quotation here or send us an email:
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FDG311N Atribi pwodwi yo

Nimewo Pati : FDG311N
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 20V 1.9A SC70-6
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 115 mOhm @ 1.9A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.5nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 270pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 750mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SC-88 (SC-70-6)
Pake / Ka : 6-TSSOP, SC-88, SOT-363