FDG410NZ Pricing (USD) [596208PC Stock]
- 1 pcs$0.06235
- 3,000 pcs$0.06204
- Nimewo Pati:
- FDG410NZ
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 20V 2.2A SC70-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDG410NZ electronic components. FDG410NZ can be shipped within 24 hours after order. If you have any demands for FDG410NZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDG410NZ Atribi pwodwi yo
Nimewo Pati :
FDG410NZ
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 20V 2.2A SC70-6
Seri :
PowerTrench®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
70 mOhm @ 2.2A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.2nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
535pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
420mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SC-88 (SC-70-6)
Pake / Ka :
6-TSSOP, SC-88, SOT-363
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