[2506PC Stock]
- Nimewo Pati:
- FDFME2P823ZT
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 20V 2.6A 6MICROFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDFME2P823ZT electronic components. FDFME2P823ZT can be shipped within 24 hours after order. If you have any demands for FDFME2P823ZT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDFME2P823ZT Atribi pwodwi yo
Nimewo Pati :
FDFME2P823ZT
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 2.6A 6MICROFET
Seri :
PowerTrench®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
142 mOhm @ 2.3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.7nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
405pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
1.4W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-MicroFET (1.6x1.6)
Pake / Ka :
6-UFDFN Exposed Pad
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