Vishay Semiconductor Diodes Division - VS-10ETF12STRL-M3

KEY Part #: K6434176

VS-10ETF12STRL-M3 Pricing (USD) [79676PC Stock]

  • 1 pcs$0.49074
  • 800 pcs$0.45543

Nimewo Pati:
VS-10ETF12STRL-M3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1.2KV 10A D2PAK. Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Diodes - RF, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-10ETF12STRL-M3 electronic components. VS-10ETF12STRL-M3 can be shipped within 24 hours after order. If you have any demands for VS-10ETF12STRL-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-10ETF12STRL-M3 Atribi pwodwi yo

Nimewo Pati : VS-10ETF12STRL-M3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1.2KV 10A D2PAK
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 1.33V @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 310ns
Kouran - Fèy Reverse @ Vr : 100µA @ 1200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : D2PAK
Operating Tanperati - Junction : -40°C ~ 150°C

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