[745PC Stock]
- Nimewo Pati:
- IRF6710S2TR1PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 25V 12A DIRECTFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF6710S2TR1PBF electronic components. IRF6710S2TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6710S2TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6710S2TR1PBF Atribi pwodwi yo
Nimewo Pati :
IRF6710S2TR1PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 25V 12A DIRECTFET
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Ta), 37A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5.9 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
13nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1190pF @ 13V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.8W (Ta), 15W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET S1
Pake / Ka :
DirectFET™ Isometric S1
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