IPP65R190E6XKSA1 Pricing (USD) [26720PC Stock]
- 1 pcs$1.41465
- 10 pcs$1.26393
- 100 pcs$0.98316
- 500 pcs$0.79613
- 1,000 pcs$0.67143
- Nimewo Pati:
- IPP65R190E6XKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 650V 20.2A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPP65R190E6XKSA1 electronic components. IPP65R190E6XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP65R190E6XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP65R190E6XKSA1 Atribi pwodwi yo
Nimewo Pati :
IPP65R190E6XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 650V 20.2A TO220
Seri :
CoolMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 730µA
Chaje Gate (Qg) (Max) @ Vgs :
73nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1620pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
151W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3
Pake / Ka :
TO-220-3
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