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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. DRAM
  4. LPDDR4
  5. K4FHE3D4HM-MHCJ

Samsung Semiconductor - K4FHE3D4HM-MHCJ

KEY Part #: K7359781

[20140PC Stock]

    Nimewo Pati:
    K4FHE3D4HM-MHCJ
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: LPDDR4, HBM Flarebolt, GDDR6, LPDDR5, DDR3, MODULE, DDR4 and HBM Aquabolt ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor K4FHE3D4HM-MHCJ electronic components. K4FHE3D4HM-MHCJ can be shipped within 24 hours after order. If you have any demands for K4FHE3D4HM-MHCJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FHE3D4HM-MHCJ Atribi pwodwi yo

    Nimewo Pati : K4FHE3D4HM-MHCJ
    Manifakti : Samsung Semiconductor
    Deskripsyon : 24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Seri : DDR3
    dansite : 24 Gb
    Org. : x32
    vitès : 3733 Mbps
    Voltage : 1.8 / 1.1 / 1.1 V
    Tanperatur. : -40 ~ 105 °C
    Pake : 200FBGA
    pwodwi dènye nouvèl : Mass Production

    Dènye nouvèl

    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Inside the building blocks of the 5G future
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Automotive Driven by Small Packages Under the Hood
    Samsung Memory Solutions for Automotive
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    How Will 5G Impact on Memory?
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    The Ultra-Low Latency SSD, Z-SSD
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    Pati cho