Vishay Semiconductor Diodes Division - V10P8-M3/87A

KEY Part #: K6429876

V10P8-M3/87A Pricing (USD) [381937PC Stock]

  • 1 pcs$0.09733
  • 13,000 pcs$0.09684

Nimewo Pati:
V10P8-M3/87A
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 80V 3.9A TO277A. Schottky Diodes & Rectifiers 10A, 80V,TRENCH SKY RECT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division V10P8-M3/87A electronic components. V10P8-M3/87A can be shipped within 24 hours after order. If you have any demands for V10P8-M3/87A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V10P8-M3/87A Atribi pwodwi yo

Nimewo Pati : V10P8-M3/87A
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 80V 3.9A TO277A
Seri : Automotive, AEC-Q101, eSMP®, TMBS®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 80V
Kouran - Mwayèn Rèktifye (Io) : 3.9A
Voltage - Forward (Vf) (Max) @ Si : 680mV @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 800µA @ 80V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-277, 3-PowerDFN
Pake Aparèy Founisè : TO-277A (SMPC)
Operating Tanperati - Junction : -40°C ~ 150°C

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