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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. MCMN2012-TP

Micro Commercial Co - MCMN2012-TP

KEY Part #: K6394454

MCMN2012-TP Pricing (USD) [615271PC Stock]

  • 1 pcs$0.06012
  • 3,000 pcs$0.05743
Nimewo Pati:
MCMN2012-TP
Manifakti:
Micro Commercial Co
Detaye deskripsyon:
MOSFET N-CH 20V 12A DFN202.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Micro Commercial Co MCMN2012-TP electronic components. MCMN2012-TP can be shipped within 24 hours after order. If you have any demands for MCMN2012-TP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MCMN2012-TP Atribi pwodwi yo

Nimewo Pati : MCMN2012-TP
Manifakti : Micro Commercial Co
Deskripsyon : MOSFET N-CH 20V 12A DFN202
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.2V, 4.5V
RD sou (Max) @ Id, Vgs : 11 mOhm @ 9.7A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 32nC @ 5V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 1800pF @ 4V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DFN2020-6J
Pake / Ka : 6-WDFN Exposed Pad

Dènye nouvèl

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