IRFI830G Pricing (USD) [26870PC Stock]
- 1 pcs$1.54148
- 1,000 pcs$1.53381
- Nimewo Pati:
- IRFI830G
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 500V 3.1A TO220FP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - JFETs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFI830G electronic components. IRFI830G can be shipped within 24 hours after order. If you have any demands for IRFI830G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI830G Atribi pwodwi yo
Nimewo Pati :
IRFI830G
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 500V 3.1A TO220FP
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.5 Ohm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
610pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
35W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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