Vishay Semiconductor Diodes Division - V8PA10HM3/I

KEY Part #: K6428420

V8PA10HM3/I Pricing (USD) [459000PC Stock]

  • 1 pcs$0.08058

Nimewo Pati:
V8PA10HM3/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 100V 8A DO221BC. Schottky Diodes & Rectifiers If 8A Vrrm 100V AEC-Q101 Qualified
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Diodes - RF, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division V8PA10HM3/I electronic components. V8PA10HM3/I can be shipped within 24 hours after order. If you have any demands for V8PA10HM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V8PA10HM3/I Atribi pwodwi yo

Nimewo Pati : V8PA10HM3/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 100V 8A DO221BC
Seri : Automotive, AEC-Q101, eSMP®, TMBS®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 760mV @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 800µA @ 100V
Kapasite @ Vr, F : 850pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-221BC, SMA Flat Leads Exposed Pad
Pake Aparèy Founisè : DO-221BC (SMPA)
Operating Tanperati - Junction : -40°C ~ 150°C

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