GF1MHE3/67A Pricing (USD) [458437PC Stock]
- 1 pcs$0.08068
- 6,000 pcs$0.07226
- Nimewo Pati:
- GF1MHE3/67A
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 1KV 1A DO214BA. Rectifiers 1000 Volt 1.0 Amp Glass Passivated
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division GF1MHE3/67A electronic components. GF1MHE3/67A can be shipped within 24 hours after order. If you have any demands for GF1MHE3/67A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GF1MHE3/67A Atribi pwodwi yo
Nimewo Pati :
GF1MHE3/67A
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 1KV 1A DO214BA
Seri :
SUPERECTIFIER®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.2V @ 1A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
2µs
Kouran - Fèy Reverse @ Vr :
5µA @ 1000V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214BA
Pake Aparèy Founisè :
DO-214BA (GF1)
Operating Tanperati - Junction :
-65°C ~ 175°C
Dènye nouvèl
Ou ka enterese tou
-
SS14-E3/61T
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC. Schottky Diodes & Rectifiers 1.0 Amp 40 Volt
-
ES2B-E3/52T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 2A DO214AA. Rectifiers 2.0 Amp 100 Volt
-
ES2FHE3_A/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 2A DO214AA. Rectifiers 2A,300V,35ns, SMB F.EFF.SM DIODE
-
ES2FHE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 2A DO214AA. Rectifiers 2A,300V,35ns, SMB F.EFF.SM DIODE
-
ES2CHE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 2A DO214AA. Rectifiers 2A,100V,20ns SMB, UF Rect, SMD
-
ES2AHE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20ns SMB, UF Rect, SMD
Pati cho
- IDT06S60CHKSA1
- GP10A-5016M3/54
- 1N4006GPE-M3/73
- D740N36TXPSA1
- UF4005 BK
- JANS1N6677UR-1
- BA157GP-M3/54
- GP02-40-M3/73
- 1N4004GPE-E3/93
- RU 4DS
- VS-MBRD330TRLPBF
- SK310B/TR13
- SB10-05A3-BT
- DLA11C-TR-E
- GPA804-BP
- 1N5401-AP
- SS32HE3/57T
- SS25HE3/52T
- SS320HE-TP
- RJU6053WDPP-M0#T2
- S3GHE3/57T
- RS3BHE3/9AT
- RGP5020-E3/54
- GPP15M-E3/54
- GI917-E3/54
- FGP30D-E3/73
- MBRD835L
- MR856
- MBRS3201T3
- SIDC53D120H6X1SA3
- VS-MUR1520PBF
- 80EPS08
- S3AB-13
- FR1J-LTP
- D255K06BXPSA1
- STPSC5H12D
- RGF1D-E3/67A
- RB068LAM150TR
- RF01VM2STE-17
- LS103A-GS18