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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

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  1. Lakay
  2. Pwodwi yo
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BCNB

Samsung Semiconductor - K4B2G1646F-BCNB

KEY Part #: K7359659

[15955PC Stock]

    Nimewo Pati:
    K4B2G1646F-BCNB
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    2 Gb 128M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: DDR4, LPDDR5, GDDR6, MODULE, HBM Flarebolt, LPDDR4X, LPDDR3 and LPDDR4 ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor K4B2G1646F-BCNB electronic components. K4B2G1646F-BCNB can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BCNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BCNB Atribi pwodwi yo

    Nimewo Pati : K4B2G1646F-BCNB
    Manifakti : Samsung Semiconductor
    Deskripsyon : 2 Gb 128M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production
    Seri : DDR3
    dansite : 2 Gb
    Org. : 128M x 16
    vitès : 2133 Mbps
    Voltage : 1.5 V
    Tanperatur. : 0 ~ 85 °C
    Pake : 96FBGA
    pwodwi dènye nouvèl : Mass Production

    Dènye nouvèl

    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Mission Peak Reference Server System for NGSFF SSD
    The Ultra-Low Latency SSD, Z-SSD
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Inside the building blocks of the 5G future
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