Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. DRAM
  4. DDR3
  5. K4B4G1646E-YCK0

Samsung Semiconductor - K4B4G1646E-YCK0

KEY Part #: K7359704

[25880PC Stock]

    Nimewo Pati:
    K4B4G1646E-YCK0
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: LPDDR5, HBM Aquabolt, GDDR5, LPDDR4X, SLC Nand, GDDR6, HBM Flarebolt and MODULE ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor K4B4G1646E-YCK0 electronic components. K4B4G1646E-YCK0 can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-YCK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-YCK0 Atribi pwodwi yo

    Nimewo Pati : K4B4G1646E-YCK0
    Manifakti : Samsung Semiconductor
    Deskripsyon : 4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Seri : DDR3
    dansite : 4 Gb
    Org. : 512M x 8
    vitès : 1600 Mbps
    Voltage : 1.35 V
    Tanperatur. : 0 ~ 85 °C
    Pake : 96FBGA
    pwodwi dènye nouvèl : Mass Production

    Dènye nouvèl

    Autonomous Driving and the Quest for Safety
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Speed for the next generation of mobile devices
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    5G and Memory - from Connected Thinking to Connected Living
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    The future of NAND technology
    Inside the building blocks of the 5G future
    Ou ka enterese tou
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    Pati cho