Comchip Technology - CDBDSC5650-G

KEY Part #: K6441678

CDBDSC5650-G Pricing (USD) [41564PC Stock]

  • 1 pcs$0.94072

Nimewo Pati:
CDBDSC5650-G
Manifakti:
Comchip Technology
Detaye deskripsyon:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 650V
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Comchip Technology CDBDSC5650-G electronic components. CDBDSC5650-G can be shipped within 24 hours after order. If you have any demands for CDBDSC5650-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBDSC5650-G Atribi pwodwi yo

Nimewo Pati : CDBDSC5650-G
Manifakti : Comchip Technology
Deskripsyon : DIODE SILICON CARBIDE POWER SCHO
Seri : -
Estati Pati : Active
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 650V
Kouran - Mwayèn Rèktifye (Io) : 21.5A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 5A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 100µA @ 650V
Kapasite @ Vr, F : 424pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : D-PAK (TO-252)
Operating Tanperati - Junction : -55°C ~ 175°C

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