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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Diodes - Rèkteur - Single
  5. CDBDSC10650-G

Comchip Technology - CDBDSC10650-G

KEY Part #: K6441607

CDBDSC10650-G Pricing (USD) [19897PC Stock]

  • 1 pcs$2.07129
Nimewo Pati:
CDBDSC10650-G
Manifakti:
Comchip Technology
Detaye deskripsyon:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 10A 650V
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Comchip Technology CDBDSC10650-G electronic components. CDBDSC10650-G can be shipped within 24 hours after order. If you have any demands for CDBDSC10650-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBDSC10650-G Atribi pwodwi yo

Nimewo Pati : CDBDSC10650-G
Manifakti : Comchip Technology
Deskripsyon : DIODE SILICON CARBIDE POWER SCHO
Seri : -
Estati Pati : Active
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 650V
Kouran - Mwayèn Rèktifye (Io) : 33A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 10A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 100µA @ 650V
Kapasite @ Vr, F : 690pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : D-PAK (TO-252)
Operating Tanperati - Junction : -55°C ~ 175°C

Dènye nouvèl

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