Vishay Siliconix - IRFD9014

KEY Part #: K6414886

[12601PC Stock]


    Nimewo Pati:
    IRFD9014
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET P-CH 60V 1.1A 4-DIP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Diodes - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix IRFD9014 electronic components. IRFD9014 can be shipped within 24 hours after order. If you have any demands for IRFD9014, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFD9014 Atribi pwodwi yo

    Nimewo Pati : IRFD9014
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET P-CH 60V 1.1A 4-DIP
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.1A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 500 mOhm @ 660mA, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 270pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.3W (Ta)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : 4-DIP, Hexdip, HVMDIP
    Pake / Ka : 4-DIP (0.300", 7.62mm)

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