IXYS - IXFN34N100

KEY Part #: K6400820

IXFN34N100 Pricing (USD) [2165PC Stock]

  • 1 pcs$21.10267
  • 10 pcs$20.99768

Nimewo Pati:
IXFN34N100
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1000V 34A SOT-227B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFN34N100 electronic components. IXFN34N100 can be shipped within 24 hours after order. If you have any demands for IXFN34N100, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN34N100 Atribi pwodwi yo

Nimewo Pati : IXFN34N100
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1000V 34A SOT-227B
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 34A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 280 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 380nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 9200pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC

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