Toshiba Semiconductor and Storage - TK60E08K3,S1X(S

KEY Part #: K6418147

TK60E08K3,S1X(S Pricing (USD) [53208PC Stock]

  • 1 pcs$0.73485
  • 50 pcs$0.64847

Nimewo Pati:
TK60E08K3,S1X(S
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 75V 60A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK60E08K3,S1X(S Atribi pwodwi yo

Nimewo Pati : TK60E08K3,S1X(S
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 75V 60A TO-220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 9 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 75nC @ 10V
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 128W
Operating Tanperati : -
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3