Vishay Semiconductor Diodes Division - GL34J-E3/83

KEY Part #: K6458005

GL34J-E3/83 Pricing (USD) [793899PC Stock]

  • 1 pcs$0.04916
  • 9,000 pcs$0.04892
  • 18,000 pcs$0.04576
  • 27,000 pcs$0.04208

Nimewo Pati:
GL34J-E3/83
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 500MA DO213. Rectifiers 600 Volt 0.5 Amp 10 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GL34J-E3/83 electronic components. GL34J-E3/83 can be shipped within 24 hours after order. If you have any demands for GL34J-E3/83, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GL34J-E3/83 Atribi pwodwi yo

Nimewo Pati : GL34J-E3/83
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 500MA DO213
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 500mA
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 500mA
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.5µs
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 4pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AA (Glass)
Pake Aparèy Founisè : DO-213AA (GL34)
Operating Tanperati - Junction : -65°C ~ 175°C

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