C3M0120100K Pricing (USD) [10187PC Stock]
- 1 pcs$4.04563
- Nimewo Pati:
- C3M0120100K
- Manifakti:
- Cree/Wolfspeed
- Detaye deskripsyon:
- MOSFET N-CH 1000V 22A TO247-4L.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Cree/Wolfspeed C3M0120100K electronic components. C3M0120100K can be shipped within 24 hours after order. If you have any demands for C3M0120100K, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
C3M0120100K Atribi pwodwi yo
Nimewo Pati :
C3M0120100K
Manifakti :
Cree/Wolfspeed
Deskripsyon :
MOSFET N-CH 1000V 22A TO247-4L
Seri :
C3M™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
22A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
15V
RD sou (Max) @ Id, Vgs :
155 mOhm @ 15A, 15V
Vgs (th) (Max) @ Id :
3.5V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs :
21.5nC @ 15V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
350pF @ 600V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
83W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-4L
Pake / Ka :
TO-247-4
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