Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 200V 1A AXIAL
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 3A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
2µs
Kouran - Fèy Reverse @ Vr :
500nA @ 200V
Mounting Kalite :
Through Hole
Operating Tanperati - Junction :
-65°C ~ 200°C