[9532PC Stock]
- Nimewo Pati:
- APT102GA60B2
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- IGBT 600V 183A 780W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT102GA60B2 electronic components. APT102GA60B2 can be shipped within 24 hours after order. If you have any demands for APT102GA60B2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT102GA60B2 Atribi pwodwi yo
Nimewo Pati :
APT102GA60B2
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 600V 183A 780W TO247
Seri :
POWER MOS 8™
Estati Pati :
Obsolete
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
183A
Kouran - Pèseptè batman (Icm) :
307A
Vce (sou) (Max) @ Vge, Ic :
2.5V @ 15V, 62A
Pouvwa - Max :
780W
Oblije chanje enèji :
1.354mJ (on), 1.614mJ (off)
Kalite Antre :
Standard
Gate chaje :
294nC
Td (on / off) @ 25 ° C :
28ns/212ns
Kondisyon egzamen an :
400V, 62A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3 Variant
Pake Aparèy Founisè :
-
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