Rohm Semiconductor - R8005ANJFRGTL

KEY Part #: K6393523

R8005ANJFRGTL Pricing (USD) [66586PC Stock]

  • 1 pcs$0.58721

Nimewo Pati:
R8005ANJFRGTL
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
R8005ANJ FRG IS A POWER MOSFET W.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

R8005ANJFRGTL Atribi pwodwi yo

Nimewo Pati : R8005ANJFRGTL
Manifakti : Rohm Semiconductor
Deskripsyon : R8005ANJ FRG IS A POWER MOSFET W
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.1 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 120W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LPTS
Pake / Ka : SC-83