DD800S17H4B2BOSA2 Pricing (USD) [110PC Stock]
- 1 pcs$417.25024
- Nimewo Pati:
- DD800S17H4B2BOSA2
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT MODULE VCES 1700V 800A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies DD800S17H4B2BOSA2 electronic components. DD800S17H4B2BOSA2 can be shipped within 24 hours after order. If you have any demands for DD800S17H4B2BOSA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DD800S17H4B2BOSA2 Atribi pwodwi yo
Nimewo Pati :
DD800S17H4B2BOSA2
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT MODULE VCES 1700V 800A
Seri :
-
Estati Pati :
Active
Konfigirasyon dyòd :
2 Independent
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1700V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
-
Voltage - Forward (Vf) (Max) @ Si :
2.1V @ 800A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
900A @ 900V
Operating Tanperati - Junction :
-40°C ~ 150°C
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
AG-IHMB130-1
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