[25PC Stock]
- Nimewo Pati:
- BSP317PE6327T
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 250V 0.43A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Diodes - RF and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSP317PE6327T electronic components. BSP317PE6327T can be shipped within 24 hours after order. If you have any demands for BSP317PE6327T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP317PE6327T Atribi pwodwi yo
Nimewo Pati :
BSP317PE6327T
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 250V 0.43A SOT223
Seri :
SIPMOS®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
430mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4 Ohm @ 430mA, 10V
Vgs (th) (Max) @ Id :
2V @ 370µA
Chaje Gate (Qg) (Max) @ Vgs :
15.1nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
262pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.8W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-SOT223-4
Pake / Ka :
TO-261-4, TO-261AA
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