Infineon Technologies - IPB240N03S4LR8ATMA1

KEY Part #: K6417978

IPB240N03S4LR8ATMA1 Pricing (USD) [47454PC Stock]

  • 1 pcs$0.82397
  • 1,000 pcs$0.75591

Nimewo Pati:
IPB240N03S4LR8ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH TO263-7.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Tiristors - TRIACs and Transistors - IGBTs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB240N03S4LR8ATMA1 Atribi pwodwi yo

Nimewo Pati : IPB240N03S4LR8ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH TO263-7
Seri : Automotive, AEC-Q101, OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 240A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 0.76 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 230µA
Chaje Gate (Qg) (Max) @ Vgs : 380nC @ 10V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 26000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO263-7-3
Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)