Infineon Technologies - IPA65R380C6XKSA1

KEY Part #: K6418610

IPA65R380C6XKSA1 Pricing (USD) [70013PC Stock]

  • 1 pcs$0.55848
  • 500 pcs$0.51236

Nimewo Pati:
IPA65R380C6XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 650V 10.6A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA65R380C6XKSA1 Atribi pwodwi yo

Nimewo Pati : IPA65R380C6XKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 650V 10.6A TO220
Seri : CoolMOS™
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 380 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 320µA
Chaje Gate (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 710pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 31W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220 Full Pack
Pake / Ka : TO-220-3 Full Pack