Infineon Technologies - IRF3704STRL

KEY Part #: K6414527

[8372PC Stock]


    Nimewo Pati:
    IRF3704STRL
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 20V 77A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Rèkteur - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRF3704STRL electronic components. IRF3704STRL can be shipped within 24 hours after order. If you have any demands for IRF3704STRL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF3704STRL Atribi pwodwi yo

    Nimewo Pati : IRF3704STRL
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 20V 77A D2PAK
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 77A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 9 mOhm @ 15A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 4.5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1996pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 87W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D2PAK
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB