DMJ70H601SV3 Pricing (USD) [62159PC Stock]
- 1 pcs$0.62904
- Nimewo Pati:
- DMJ70H601SV3
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CHANNEL 700V 8A TO251.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMJ70H601SV3 electronic components. DMJ70H601SV3 can be shipped within 24 hours after order. If you have any demands for DMJ70H601SV3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMJ70H601SV3 Atribi pwodwi yo
Nimewo Pati :
DMJ70H601SV3
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CHANNEL 700V 8A TO251
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
600 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
20.9nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
686pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251
Pake / Ka :
TO-251-3 Stub Leads, IPak
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