ON Semiconductor - FQD2N60CTM

KEY Part #: K6392985

FQD2N60CTM Pricing (USD) [227124PC Stock]

  • 1 pcs$0.16285
  • 2,500 pcs$0.15234

Nimewo Pati:
FQD2N60CTM
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 600V 1.9A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQD2N60CTM Atribi pwodwi yo

Nimewo Pati : FQD2N60CTM
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 600V 1.9A DPAK
Seri : QFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4.7 Ohm @ 950mA, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 235pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 44W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63