FDFMA3N109 Pricing (USD) [296432PC Stock]
- 1 pcs$0.12540
- 3,000 pcs$0.12478
- Nimewo Pati:
- FDFMA3N109
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 30V 2.9A MICRO2X2.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDFMA3N109 electronic components. FDFMA3N109 can be shipped within 24 hours after order. If you have any demands for FDFMA3N109, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDFMA3N109 Atribi pwodwi yo
Nimewo Pati :
FDFMA3N109
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 30V 2.9A MICRO2X2
Seri :
PowerTrench®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
123 mOhm @ 2.9A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
220pF @ 15V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
1.5W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-MicroFET (2x2)
Pake / Ka :
6-VDFN Exposed Pad
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