Vishay Semiconductor Diodes Division - SS24SHE3J_A/H

KEY Part #: K6441050

[3608PC Stock]


    Nimewo Pati:
    SS24SHE3J_A/H
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE SCHOTTKY 40V 2A DO214AC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - JFETs and Transistors - IGBTs - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division SS24SHE3J_A/H electronic components. SS24SHE3J_A/H can be shipped within 24 hours after order. If you have any demands for SS24SHE3J_A/H, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SS24SHE3J_A/H Atribi pwodwi yo

    Nimewo Pati : SS24SHE3J_A/H
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE SCHOTTKY 40V 2A DO214AC
    Seri : Automotive, AEC-Q101
    Estati Pati : Discontinued at Digi-Key
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 40V
    Kouran - Mwayèn Rèktifye (Io) : 2A
    Voltage - Forward (Vf) (Max) @ Si : 550mV @ 2A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 200µA @ 40V
    Kapasite @ Vr, F : 130pF @ 4V, 1MHz
    Mounting Kalite : Surface Mount
    Pake / Ka : DO-214AC, SMA
    Pake Aparèy Founisè : DO-214AC (SMA)
    Operating Tanperati - Junction : -55°C ~ 150°C

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