FESB16JT-E3/81 Pricing (USD) [93548PC Stock]
- 1 pcs$0.41797
- 800 pcs$0.38285
- 1,600 pcs$0.28592
- 2,400 pcs$0.26686
- 5,600 pcs$0.25415
- Nimewo Pati:
- FESB16JT-E3/81
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 600V 16A TO263AB. Rectifiers 16 Amp 600 Volt 50ns
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division FESB16JT-E3/81 electronic components. FESB16JT-E3/81 can be shipped within 24 hours after order. If you have any demands for FESB16JT-E3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FESB16JT-E3/81 Atribi pwodwi yo
Nimewo Pati :
FESB16JT-E3/81
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 16A TO263AB
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
16A
Voltage - Forward (Vf) (Max) @ Si :
1.5V @ 16A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Kapasite @ Vr, F :
145pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
Operating Tanperati - Junction :
-65°C ~ 150°C
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