Microsemi Corporation - APT33GF120B2RDQ2G

KEY Part #: K6422424

APT33GF120B2RDQ2G Pricing (USD) [4845PC Stock]

  • 1 pcs$8.94169
  • 10 pcs$7.73120
  • 25 pcs$7.15133
  • 100 pcs$6.57150
  • 250 pcs$5.99167

Nimewo Pati:
APT33GF120B2RDQ2G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 64A 357W TMAX.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single and Tiristors - TRIACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT33GF120B2RDQ2G Atribi pwodwi yo

Nimewo Pati : APT33GF120B2RDQ2G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 64A 357W TMAX
Seri : -
Estati Pati : Active
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 64A
Kouran - Pèseptè batman (Icm) : 75A
Vce (sou) (Max) @ Vge, Ic : 3V @ 15V, 25A
Pouvwa - Max : 357W
Oblije chanje enèji : 1.315mJ (on), 1.515mJ (off)
Kalite Antre : Standard
Gate chaje : 170nC
Td (on / off) @ 25 ° C : 14ns/185ns
Kondisyon egzamen an : 800V, 25A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3 Variant
Pake Aparèy Founisè : -