RUE002N02TL Pricing (USD) [1336019PC Stock]
- 1 pcs$0.03061
- 3,000 pcs$0.03045
- Nimewo Pati:
- RUE002N02TL
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 20V .2A EMT3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - JFETs, Tiristors - DIACs, SIDACs and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RUE002N02TL electronic components. RUE002N02TL can be shipped within 24 hours after order. If you have any demands for RUE002N02TL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RUE002N02TL Atribi pwodwi yo
Nimewo Pati :
RUE002N02TL
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 20V .2A EMT3
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.2V, 2.5V
RD sou (Max) @ Id, Vgs :
1.2 Ohm @ 200mA, 2.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
25pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
EMT3
Pake / Ka :
SC-75, SOT-416
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