Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 40A TO247AC
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
40A
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 40A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
180ns
Kouran - Fèy Reverse @ Vr :
100µA @ 200V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AC Modified
Operating Tanperati - Junction :
-40°C ~ 150°C