Vishay Semiconductor Diodes Division - 8EWF12S

KEY Part #: K6451534

[25PC Stock]


    Nimewo Pati:
    8EWF12S
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 1.2KV 8A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division 8EWF12S electronic components. 8EWF12S can be shipped within 24 hours after order. If you have any demands for 8EWF12S, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    8EWF12S Atribi pwodwi yo

    Nimewo Pati : 8EWF12S
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 1.2KV 8A DPAK
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 1200V
    Kouran - Mwayèn Rèktifye (Io) : 8A
    Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 8A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 270ns
    Kouran - Fèy Reverse @ Vr : 100µA @ 1200V
    Kapasite @ Vr, F : -
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
    Pake Aparèy Founisè : D-Pak
    Operating Tanperati - Junction : -40°C ~ 150°C

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