ON Semiconductor - FQPF8N90C

KEY Part #: K6419024

FQPF8N90C Pricing (USD) [88025PC Stock]

  • 1 pcs$0.44420
  • 1,000 pcs$0.43120

Nimewo Pati:
FQPF8N90C
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 900V 6.3A TO-220F.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FQPF8N90C electronic components. FQPF8N90C can be shipped within 24 hours after order. If you have any demands for FQPF8N90C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQPF8N90C Atribi pwodwi yo

Nimewo Pati : FQPF8N90C
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 900V 6.3A TO-220F
Seri : QFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.9 Ohm @ 3.15A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2080pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 60W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220F
Pake / Ka : TO-220-3 Full Pack