Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 1KV 1A D5A
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.6V @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
500ns
Kouran - Fèy Reverse @ Vr :
500nA @ 1000V
Kapasite @ Vr, F :
15pF @ 12V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-5A
Operating Tanperati - Junction :
-65°C ~ 175°C