Infineon Technologies - IRFB38N20DPBF

KEY Part #: K6401548

IRFB38N20DPBF Pricing (USD) [39965PC Stock]

  • 1 pcs$0.94072
  • 10 pcs$0.85000
  • 100 pcs$0.68297
  • 500 pcs$0.53120
  • 1,000 pcs$0.44013

Nimewo Pati:
IRFB38N20DPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 200V 43A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Diodes - Rèkteur - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFB38N20DPBF electronic components. IRFB38N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFB38N20DPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFB38N20DPBF Atribi pwodwi yo

Nimewo Pati : IRFB38N20DPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 200V 43A TO-220AB
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 43A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 54 mOhm @ 26A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2900pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.8W (Ta), 300W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3