ISSI, Integrated Silicon Solution Inc - IS46R16160F-5BLA1-TR

KEY Part #: K938170

IS46R16160F-5BLA1-TR Pricing (USD) [19375PC Stock]

  • 1 pcs$2.63707
  • 2,500 pcs$2.62395

Nimewo Pati:
IS46R16160F-5BLA1-TR
Manifakti:
ISSI, Integrated Silicon Solution Inc
Detaye deskripsyon:
IC DRAM 256M PARALLEL 60TFBGA. DRAM Automotive (-40 to +85C), 256M, 2.5V, DDR1, 64Mx8, 200MHz, 60 ball FBGA RoHS, T&R
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Entèfas - Buffer siyal yo, Repeteur, Splitters, Embedded - Microcontroller, Microprocessor, FPGA M, Entèfas - Expanders I / O, Lojik - Comparators, Entèfas - CODECs, Revèy / Distribisyon - Minis pwogramasyon ak osila, Entèfas - Entèfas sensor ak detektè and PMIC - Display Chofè ...
Avantaj konpetitif:
We specialize in ISSI, Integrated Silicon Solution Inc IS46R16160F-5BLA1-TR electronic components. IS46R16160F-5BLA1-TR can be shipped within 24 hours after order. If you have any demands for IS46R16160F-5BLA1-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS46R16160F-5BLA1-TR Atribi pwodwi yo

Nimewo Pati : IS46R16160F-5BLA1-TR
Manifakti : ISSI, Integrated Silicon Solution Inc
Deskripsyon : IC DRAM 256M PARALLEL 60TFBGA
Seri : -
Estati Pati : Active
Kalite memwa yo : Volatile
Fòma memwa : DRAM
Teknoloji : SDRAM - DDR
Size memwa : 256Mb (16M x 16)
Frè frekans lan : 200MHz
Ekri Sik Tan - Pawòl, Page : 15ns
Tan aksè : 700ps
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 2.3V ~ 2.7V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 60-TFBGA
Pake Aparèy Founisè : 60-TFBGA (13x8)

Ou ka enterese tou
  • AT27C4096-90PU

    Microchip Technology

    IC EPROM 4M PARALLEL 40DIP. EPROM 4Mb (256Kx16) OTP 5V 90ns

  • 71V3576S150PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP.

  • 71V3577S75PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 4M 3.3V I/O PBSRAM SLOW X

  • W94AD2KBJX5I

    Winbond Electronics

    IC DRAM 1G PARALLEL 90VFBGA. DRAM 1G mDDR, x32, 200MHz, Ind temp

  • TC58BYG2S0HBAI4

    Toshiba Memory America, Inc.

    4GB SLC BENAND 24NM BGA 9X11 EE. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)

  • TC58BVG2S0HBAI4

    Toshiba Memory America, Inc.

    IC FLASH 4G PARALLEL 63TFBGA. NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)