IPAW60R280P7SXKSA1 Pricing (USD) [57375PC Stock]
- 1 pcs$0.69823
- 10 pcs$0.61670
- 100 pcs$0.48734
- 500 pcs$0.37793
- 1,000 pcs$0.28224
- Nimewo Pati:
- IPAW60R280P7SXKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CHANNEL 600V 12A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPAW60R280P7SXKSA1 electronic components. IPAW60R280P7SXKSA1 can be shipped within 24 hours after order. If you have any demands for IPAW60R280P7SXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPAW60R280P7SXKSA1 Atribi pwodwi yo
Nimewo Pati :
IPAW60R280P7SXKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CHANNEL 600V 12A TO220
Seri :
CoolMOS™ P7
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
280 mOhm @ 3.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 190µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
761pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
24W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220 Full Pack
Pake / Ka :
TO-220-3 Full Pack
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