Infineon Technologies - IRFR9120NTRPBF

KEY Part #: K6420801

IRFR9120NTRPBF Pricing (USD) [258217PC Stock]

  • 1 pcs$0.14324
  • 2,000 pcs$0.12289

Nimewo Pati:
IRFR9120NTRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET P-CH 100V 6.6A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR9120NTRPBF Atribi pwodwi yo

Nimewo Pati : IRFR9120NTRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET P-CH 100V 6.6A DPAK
Seri : HEXFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 480 mOhm @ 3.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 350pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 40W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63